RSS

Category Archives: materials

Your patent is invalid if you’re not the first inventor: The Fox Group, Inc. v. Cree, Inc.

The Federal Circuit recently handed down a decision affirming a lower district court ruling that found the claims of U.S. Pat. No. 6,562,130 asserted against Cree, Inc. by The Fox Group, Inc. to be invalid, since Cree had produced the claimed single-crystal silicon carbide (SiC) material before the priority date of the ’130 patent.

This result was based on the “first to invent” requirement under current U.S. patent law, which is scheduled to change to a “first inventor to file” requirement on March 16, 2013 as part of the Leahy-Smith America Invents Act (AIA).  But as described at the end of this post, under the facts of this case, the result would be the same even if the upcoming “first inventor to file” requirement were used instead.

SiC is a man-made material that has been around for more than a century in a multicrystalline and high defect density form, primarily used as an abrasive.  But in single-crystal form with low intrinsic defect densities (e.g., dislocations, micropipes, and inclusions of a secondary phase within the crystal), SiC is a semiconductor that can be used in LED light sources and electronics designed to withstand high power levels and high temperatures.  In addition, single-crystal SiC can be used as a substrate material for epitaxial growth of bulk Group III nitrides (e.g., gallium nitride) for high speed electronics.

  

Cree markets a wide variety of LED-based lighting components, power MOSFETs, and electronic devices for RF communications, all  based on single-crystal SiC.  For fiscal year 2012, Cree reported revenues of $1.16 billion.  The Fox Group is apparently affiliated with Nitride Crystals, Inc., a supplier of SiC wafers which lists the ’130 patent on its website as one of its patents.

Under current U.S. patent law’s “first to invent” requirement, a patent is invalid if the listed inventors were not the first inventors of the claimed invention (i.e., the claimed invention was first invented by someone else), as long as the first inventors had not “abandoned, suppressed, or concealed” the invention (35 U.S.C. 102(g)).  To get a patent deemed invalid under this provision, the accused infringer can prove that the invention was made by someone else prior to the listed inventors doing so.  The prior inventor does not have to be the accused infringer, but in many cases, this is the case since the accused infringer typically has much more information and evidence regarding its activities than it does of the activities of some third party.

Cree showed that in 1995 it had produced a SiC wafer that included a region with an exceptionally low intrinsic defect density, as evidenced by x-ray topographs, and that this wafer met the features of the material claimed in the ’130 patent.  Cree also showed that it had publicized this result at a technical conference in 1995 and in a journal article in 1996.  Since the priority date of the ’130 patent was in 1997, the district court held that the asserted claims of the ’130 patent were invalid, and granted summary judgement to Cree.  The Federal Circuit affirmed the lower court ruling on the basis that Cree had proved that (i) it had once made the claimed material in 1995 so its researchers were prior inventors to those of the ’130 patent and (ii) it had promptly and publicly disclosed its findings regarding the wafer’s low defect density to the public, so it had not abandoned, suppressed, or concealed the invention.

Since the claims of the ’130 patent were directed to the SiC material itself, and not the process of making the material, it was enough for Cree to have shown that it once made the claimed material before the priority date of the ’130 patent, and that Cree had promptly publicized this result.  Had the claims of the ’130 patent been directed instead to a process of making such materials, Cree’s proof might have been insufficient, since it is not clear whether Cree’s public disclosure was sufficiently detailed to enable someone skilled in the technology to perform such a process.

It’s interesting to consider how the same facts would play out under the AIA’s upcoming “first inventor to file” requirement scheduled to go into effect on March 16, 2013.  Under the AIA, 35 U.S.C. 102 omits subsection (g), and the relevant portion states that “a person shall be entitled to a patent unless …  the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.”  Since Cree publicized the properties of its low-defect-density SiC wafer in 1995 and 1996, before the effective filing date of the ’130 patent in 1997, the ’130 patent would be held invalid under this statute as well.

(The AIA’s statute includes an exception if the public disclosure was made by the inventors listed on the patent within one year of the patent’s effective filing date, but since the disclosure at issue was by Cree and not the listed inventors of the ’130 patent, this exception does not apply under these facts.)

 

Tags: , , , ,

Process for making silicon nanowires; Bandgap Engineering Inc.; U.S. Pat. No. 8,143,143

U.S. Patent No. 8,143,143, issued on March 27, 2012 to Bandgap Engineering Inc. of Waltham, MA, discloses a process for fabricating silicon nanowires.

According to the ’143 patent, silicon nanowires have been previously grown “from the bottom up” using various deposition techniques performed under vacuum conditions, and formed by removing material from bulk silicon “from the top down” using various plasma etching techniques performed under vacuum conditions.  However, the costs and limited scalability of these techniques has hindered their use.  Existing solution-based processes to etch silicon wafers in a direction normal to the surface have had limited success in achieving diameters that are less than 100 nanometer, which the ’143 patent describes as being of value “to a variety of electronic, optoelectronic, electrochemical and electromechanical applications” since “it is within the sub-100 nm range that silicon begins to demonstrate novel properties distinguishable from the properties of bulk silicon.” 

The ’143 patent discloses a solution-based etching process that deposits sub-100 nm nanoparticles and a silver film onto the silicon wafer, which is then exposed to an etchant aqueous solution of HF and an oxidizing agent.  The silicon wafer is etched in the regions between the nanoparticles, leaving an array of sub-100 nm silicon nanowires standing up on the silicon wafer.  For example, the electron microscope micrographs above show a field of silicon nanowires that have diameters ranging from 12-70 nanometers.  The ’146 patent mentions various uses of this material, including as an interfacial layer between bulk silicon and another material, and novel LED and transistor applications.  Of particular interest to Bandgap Engineering are photovoltaic applications, which utilize the quantum confinement in the silicon nanowires to form intermediate band photovoltaic (IBPV) materials for solar cells, and as anodes in lithium ion batteries.

 According to its website, “Bandgap’s nanowire-enhanced solar cell designs combine low-cost processing with crystalline silicon to yield high-efficiency products” which are made possible by their “highly tunable silicon nanowires.”  They tout that their high-efficiency photovoltaics can reduce reflection of incident light and can “dramatically increase the optical absorption of silicon.”  The company is also developing their silicon nanowires for “high-capacity Li-ion battery anodes.”

According to the USPTO database, the ’146 patent is Bandgap Engineering’s second U.S. patent, the first being issued in July 2011 (U.S. Pat. No. 7,973,995) for an optoelectronic device having a nanowire array and a host material intermingled with the nanowire array and containing light-scattering or absorption/luminescence centers.

 

Tags: , ,

U.S. Patents of the 2012 Prism Awards Finalists: Defense and Security

For the “Defense and Security” category, the three finalists for the 2011 “Prism Awards”are:

According to Headwall’s website, the company “has been at the forefront of hyperspectral imaging since 1994″ and “[w]ith its patented, aberration-corrected Hyperspec™ sensors, the company has established a worldwide reputation for exceptional imaging performance.”  Using hyperspectral imaging, spectral data at wavelengths outside the range seen by the human eye are acquired and the generated images distinguish items within the sensor’s field of view based on their chemical composition.  Headwall touts its RECON™ handheld sensor as being ruggedized and providing “very rapid hyperspectral scene rendering of small targets at distances up to 1.5 kilometers.”  Its defense and security uses are explained as allowing a user ”to spectrally resolve a 6 by 6 inch target from a distance of one mile” such as “a face in a treeline.”  Last year, Headwall’s “Hyperspec™ Point & Stare” sensor was a finalist for the 2010 Prism Award in the same category.

According to the USPTO database, the latest U.S. patent awarded to Headwall was U.S. Pat. No. 7,518,722 in 2009, and there are not any published applications assigned to Headwall.  Perhaps the company has stopped filing patents, or perhaps they are filing their patent applications via an unidentified subsidiary or “holding company.”

A military technology summary on its website describes the MEPAD system as “a compact, field-ready pathogen detection system that implements a full ELISA sandwich assay in a microfluidic format,” that is powered by a USB connection, and ”can detect an array of biological and chemical threats, and identify them within a 1/2 hour processing time.”  The system was described back in April 2011 as including “a disposable microfluidic chip,” “a highly sensitive portable microfluidic fluorescence measurement unit that also controls the flow of samples and reagents through the microfluidic channels of the chip,” ”a commercial 635-nm diode laser, an avalanche photodiode (APD) that measures fluorescence, and three filtering mirrors that provide more than 100 dB of excitation line suppression in the signal detection channel.”  In 2006, Physical Optics received a Small Business Innovation Research (SBIR) Phase I grant from the Department of Homeland Security of nearly $100,000 to develop the MEPAD system, which is “based on a novel, disposable, microfluidic lab-on-a-chip (LOC) that performs conventional ELISA and is equipped with a unique fiber optic measurement system.”

According to the USPTO database, Physical Optics owns more than 100 U.S. patents, and numerous pending U.S. patent applications, but I was unable to find any that described the MEPAD system.  This could mean that such a U.S. patent application does not exist, but it could also be that the patent application has not yet been made public by the USPTO.  Under current U.S. patent law, U.S. patent applications are published 18 months after their earliest priority date, so a search will not turn up the application until then.  Furthermore, if an applicant plans to only file a U.S. patent application, then the applicant can request that the USPTO not published the patent application at all.  This way, the contents and the existence of the patent application can be kept secret, until the application eventually issues as a U.S. patent, at which time the U.S. patent is made available to the public.

There are conditions under which even a U.S. patent is kept secret from the public.  When a technology of a U.S. patent application is deemed to be sensitive enough, a “secrecy order” is imposed that keep the existence and the content of the patent application and its resulting U.S. patent secret in the interest of national security.  We can be sure that a patent application describing the MEPAD system isn’t subject to a secrecy order, because if there were such an order, Physical Optics wouldn’t be able to present its system at the Photonics West conference.

According to its website, the micro-Z is “a compact, handheld, battery-powered Terahertz Time Domain spectrometer which has the total freedom of operation previously unattainable with stationary instruments” and “can be targeted for a variety of on-site inspection tasks using THz waves, including real-time chemical identification.”  A company video shows the micro-Z in action.

Zomega’s Chairman and President is Dr. Xi-Cheng Zhang, recent winner of the IEEE Photonics Society’s 2011 William Streifer Scientific Achievement Award.  Dr. Zhang is inventor or co-inventor on 26 U.S. patents, many of which are assigned to Rensselear Polytechnic Institute, where Dr. Zhang is the Eric Josson Professor of Science.  Reviewing the titles of Dr. Zhang’s U.S. patents and pending patent applications, only one is directed to a compact THz spectrometer (US2009/0066948 A1, now abandoned), which is assigned to Hydroelectron Ventures, Inc. (HEV) of Westmount, Quebec, Canada.  A video on HEV’s website explains that Zomega has partnered with Hydroelectron Ventures on a THz “spectroscopy at a distance” imaging system.

If you like, you can register your guess regarding which product you think will win the Prism Award in the poll below.  There is not much to go on in terms of U.S. patents, but I’m guessing that Headwall Photonics will win this year.

Also, if you’re planning on being at the Photonics West conference and are interested in talking about patents, I’d enjoy meeting you, so feel free to contact me at @Itchkawitz or at bsi “at” kmob “dot” com.

 

Tags: , , , , , ,

Thin-film photovoltaic devices; Sunlight Photonics, Inc.; U.S. Pat. No. 7,910,396

U.S. Patent No. 7,910,396, issued on March 22, 2011 to Sunlight Photonics, Inc. of South Plainfield, NJ, discloses a method of making thin-film photovoltaic devices.

 

According to the ’396 patent, photovoltaic devices using thin-film compound semicondutor materials such as copper indium gallium selenide (CIGS) can provide electricity at higher efficiencies and lower cost, as compared to silicon-based devices.  However, existing techniques for forming such thin films are difficult to scale up to commercial production levels while maintaining requirements of film uniformity and compositional control.  The ’396 patent discloses a method for producing compound semiconductor thin films by depositing a precursor film containing at least two chemical elements and inducing a chemical reaction in the deposited film giving the film a different chemical composition by introducing additional amounts of one of the chemical elements.  The disclosed process is described as “provid[ing] superior compositional uniformity,” “enabl[ing] more flexible control of the film’s morphology,” and “improv[ing] intergrain electrical transport” and intergrain adhesion. 

According to its website, Sunlight Photonics “is a venture-backed company focused on developing low cost, high efficiency renewable energy sources based on solar power.”  The company’s goal is to “develop and bring to the mass market innovative technology to harvest solar energy with high levels of efficiency while providing cost-competitiveness with those of fossil fuel-based electric power plants.”  Sunight Photonics is guided by the former management team of InPlane Photonics, which was acquired by CyOptics in 2007.   According to the USPTO database, Sunlight Photonics owns three U.S. patents, including the ’396 patent, and another (U.S. Pat. No. 7,923,282) recently issued on April 12, 2011.

The ’396 patent resulted from an application filed in October 2009.  About one year after filing, the application was accepted into the USPTO’s “Green Technology Pilot Program,” in response to a petition filed by Sunlight Photonics.  Under this program, the application was given special status so that it could be advanced out of turn for examination.  As a result, the application was examined and allowed in February 2011, resulting in a pendency of about 17 months, which is significantly less than the average pendency for this technology in the USPTO of about 30 months (using FY’09 statistics). 

This pilot program is scheduled to continue until December 2011, and approximately 1/2 of the 3,000 spots in the program currently remain available.  If your application can be characterized as being related to green technology (e.g., greenhouse gas reduction, energy conservation, development of renewable energy resources, etc.) then it may be worthwhile to file such a petition to put your application on a faster track through the USPTO.

 

Tags: , ,

 
Follow

Get every new post delivered to your Inbox.

Join 47 other followers